elektronische bauelemente SCS40STN 0.12 a, 40 v silicon epitaxial planar schottky barrier rectifiers 13-dec-2013 rev. b page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. rohs compliant product a suffix of ?-c? specifies halogen & lead-free description planar schottky barrier diode with an integrated guard ring for stress protection features low diode capacitance low forward voltage guard ring protected high breakdown voltage application ultra high-speed switching voltage clamping mobile communication ,digital (still) cameras , pdas and pcmcia cards marking package information package mpq leader size wbfbp-02c 10k 7 inch maximum ratings characteristics (t a =25 c unless otherwise specified) paramete r s y mbol limits unit dc reverse voltage v r 40 v forward continuous current i f 120 ma peak forward surge current @ tp< 10ms i fsm 200 ma junction, storage temperature range t j , t stg 150, -55 ~ 150 electrical characteristics (t a =25 c unless otherwise specified) parameters s y mbol min. t yp . max. unit test conditions - - 0.38 i f =1ma - - 0.5 i f =10ma forward voltage v f - - 1 v i f =40ma - - 1 v r =30v reverse current 1 i r - - 10 a v r =40v diode capacitance c d - - 5 pf v r =0, f=1.0mhz note: 1. pulse test: tp=300 s; =0.02. wbfbp-02c s6 millimete r millimete r ref. min. max. ref. min. max. a 0.950 1.050 g 0.275 0.325 b 0.550 0.650 h 0.275 0.325 c 0.450 0.550 j 0.275 0.325 d 0.450 ref. k 0.675 0.725 e 0.400 ref. l 0.010 0.070 f 0.275 0.325 m 0.010 ref. ? ? ? ? a c b f m m g j h k e d l
elektronische bauelemente SCS40STN 0.12 a, 40 v silicon epitaxial planar schottky barrier rectifiers 13-dec-2013 rev. b page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
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